fred die in wafer form FD120H06A5BT www.irf.com 1 preliminary data sheet pd-20183 01/01 not to scale 40 (1.57) ? 125 (4.92) notes: 1. all dimensions are shown in millimeters (inches). 2. controlling dimension (inch): 3. dimensions and tolerances: a = 3.048 0.05 (0.120 0.002) b = 3.048 0.05 (0.120 0.002) c = 2.388 0.003 (0.094 0.0001) d = 2.388 0.003 (0.094 0.0001) 4. letter designation: a = anode (top metal) c = cathode (back metal) 5. sawing: recommended blade semitec s1025 qs00 blade 6. minimum order quantity: 900 die a d 0.35 0.01 c a c b (0.014 0.0004) wafer flat alligned with side b of the die reference ir packaged part: 15eth06 series
FD120H06A5BT 2 preliminary data sheet pd-20183 01/01 www.irf.com mechanical data fd 120 h 06 a 5 b 1 2 3 1 - fred die 2 - chip dimension in mils: 120 = 120x120 square 3 - process h = hyperfast 4 - voltage code vrrm (*100) eg: 06 = 600v 5 - chip surface metallization: a = aluminium (anode), silver (cathode) 6 - wafer diameter in inches 7 - packaging: b = inked probed unsawn wafer (wafer in box) 4 device code ordering information table 6 5 nominal back metal composition, thickness cr - ni - ag (1 ka - 2 ka - 3 ka) nominal front metal composition, thickness 99% al, 1% si (3 microns) chip dimensions 0.120" x 0.120" (see drawing) reject ink dot size 0.25 mm diameter minimum recommended storage environment storage in original container, in dessicated nitrogen, with no contamination 7 electrical characteristics (wafer form) parameters units test conditions v fm maximum forward voltage 2.3 v t j = 25c, i f = 15 a v rrm mimunum reverse breakdown voltage 600 v t j = 25c, i rrm = 200 a i rm max. reverse leakage current 100a t j = 25c, v rrm = 600 v t rr typ. reverse recovery time 20 ns i f = 1a, di/ dt = 100a/s, v r = 30 v
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